2PG001,N-Channel Enhancement Mode IGBT with Fast Switching, TO-220F

The 2PG001 is an N-Channel Enhancement Mode Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching circuits and plasma display panel (PDP) drive applications. This IGBT integrates low conduction losses with fast switching speeds, making it ideal for high-frequency power applications.

With a Collector-Emitter Voltage (V_CES) of 300V and a Continuous Collector Current of 30A, the 2PG001 provides robust performance for demanding switching applications. The low Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.0V to 2.5V at 30A ensures minimal energy losses, improving overall system efficiency.

Designed in a TO-220F package, the 2PG001 offers enhanced thermal performance and electrical isolation, simplifying circuit integration and cooling requirements. This device is suitable for applications requiring fast switching, high efficiency, and compact design.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 300V, suitable for medium-voltage applications.
• Moderate Current Capability: Continuous Collector Current of 30A, with a peak current of 120A.
• Low Saturation Voltage: Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.0V to 2.5V at 30A, reducing conduction losses.
• Fast Switching Performance: Optimized for high-speed circuits and plasma display panel (PDP) drive applications.
• Compact TO-220F Package: Provides efficient heat dissipation and electrical isolation for better thermal management.
• Wide Operating Temperature Range: Withstands temperatures from -55°C to +150°C for industrial-grade reliability.