FQD13N06L, N-Channel Power MOSFET,TO-252

The FQD13N06L is a high-performance N-Channel Power MOSFET designed for power management and switching applications. Built using advanced QFET® DMOS technology, this MOSFET minimizes on-state resistance while providing fast switching speeds and high avalanche energy handling.

With a Drain-Source Breakdown Voltage (Vds) of 60V and a Continuous Drain Current (Id) of 11A, the FQD13N06L delivers exceptional performance in power-intensive circuits. Featuring a low gate charge of 4.8nC, it ensures energy-efficient operation and minimizes heat dissipation. The TO-252 (DPAK) surface-mount package offers superior thermal efficiency, making it ideal for compact, high-power electronic designs.

Whether used in switched mode power supplies (SMPS), DC motor controls, or audio amplifier circuits, the FQD13N06L MOSFET provides reliability, speed, and efficiency, making it a perfect choice for modern electronic systems.

• High Current and Voltage Rating: Supports up to 60V Drain-Source Breakdown Voltage (Vds) and 11A Continuous Drain Current (Id) for power-efficient applications.
• Low On-Resistance: Reduces conduction losses with an RDS(on) of 115mΩ at VGS = 10V, ensuring efficient power conversion.
• Fast Switching Performance: Engineered for high-speed switching with low gate charge (4.8nC typical) for improved efficiency in power applications.
• Compact and Durable Package: Comes in a TO-252 (DPAK) package, providing excellent thermal dissipation and surface-mount compatibility.
• Versatile Applications: Ideal for switched mode power supplies (SMPS), DC motor control, audio amplifiers, and variable switching power applications.
• Wide Operating Temperature Range: Designed to function in extreme environments, with an operating temperature range from -55°C to +150°C.