GT50N322,N-Channel IGBT,1000V,50A,TO-3P

The GT50N322 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for efficient switching in high-power applications. With a maximum collector-emitter voltage of 1000V and a continuous collector current of 50A, this IGBT is suitable for use in power inverters, motor drives, and other high-power industrial equipment. Featuring fast switching and low conduction losses, the GT50N322 enhances efficiency, making it ideal for demanding environments.

Packaged in the durable TO-3P package, the GT50N322 provides robust thermal performance, ensuring effective heat dissipation during operation. The transistor is engineered for high-voltage applications where reliability is essential. Its rugged design allows it to withstand the rigors of industrial use, making it an excellent choice for both professional engineers and hobbyists.

• High Voltage Capability: Supports up to 1000V collector-emitter voltage, ideal for high-power applications.
• High Output Current: Continuous collector current of 50A, suitable for demanding power circuits.
• Efficient Switching: Fast switching characteristics for high-efficiency performance.
• TO-3P Package: Robust through-hole package ensures excellent heat dissipation.
• Durable Design: Built to handle high currents and voltages, ensuring long-term reliability.
• Versatile Applications: Suitable for motor drives, power inverters, and industrial systems.