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K75EEL5,IKZ75N65EH5, TO-247, High-Speed 5 IGBT, 650V ,75A with RAPID 1 Antiparallel Diode

K75EEL5,IKZ75N65EH5, TO-247, High-Speed 5 IGBT, 650V ,75A with RAPID 1 Antiparallel Diode

SKU
SCTx1180
Brand
Infineon
Part Number
IKZ75N65EH5
Categories:
Semiconductors, Transistors, Generic, IGBT, Infineon
AED 45.00
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The K75EEL5 is a high-speed 5th-generation Insulated Gate Bipolar Transistor (IGBT) in a TO-247 package, leveraging TRENCHSTOP™ 5 technology. It features a copacked RAPID 1 fast and soft antiparallel diode for enhanced efficiency in switching and resonant topologies. With a high collector-emitter voltage of 650V, a maximum collector current of 75A, and low switching losses, this IGBT is an excellent choice for high-frequency switching applications.

Its superior thermal characteristics, low gate charge, and high reliability make it ideal for demanding industrial environments such as uninterruptible power supplies, welding converters, and solar inverters.

Key Features :

  • High-speed TRENCHSTOP™ 5 IGBT technology for superior efficiency.
  • Copacked with RAPID 1 soft antiparallel diode.
  • Collector-emitter breakdown voltage (VCE): 650V.
  • High DC collector current: 75A (at 100°C).
  • Low gate charge for reduced switching losses.
  • Environmentally friendly: Pb-free, RoHS-compliant, and halogen-free.
Operating Temperature -40C To +175C
Mounting Style Through Hole
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Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1 Day

Free

Available

inside UAE

2 - 3 Days

22 AED / Free Above 50 AED

Available

International

4 - 7 Days

180 AED / 49 $

pre-order

General

4-5 Weeks

  

K75EEL5,IKZ75N65EH5, TO-247, High-Speed 5 IGBT, 650V ,75A with RAPID 1 Antiparallel Diode

AED 45.00