TK62N60W, N-Channel Power MOSFET, TO-247 Package

The TK62N60W is a silicon N-channel power MOSFET designed for high-voltage and high-speed switching applications. With a drain-source voltage rating of 600V and a low on-resistance of 0.04Ω, it is suitable for use in switching voltage regulators and other high-voltage circuits. The transistor's high current handling capability and fast switching performance contribute to efficient and reliable operation in demanding environments. Packaged in the TO-247 form factor, it ensures efficient heat dissipation and ease of mounting.

• High Voltage Capability: Withstands a drain-source voltage (V_DS) of up to 600V, suitable for high-voltage applications.
• Low On-Resistance: Features a maximum R_DS(on) of 0.04Ω at V_GS = 10V, reducing conduction losses.
• High Current Handling: Supports a continuous drain current (I_D) of 61.8A, accommodating substantial power loads.
• Fast Switching Performance: Designed for rapid switching operations, enhancing efficiency in high-frequency applications.
• Robust Thermal Performance: Capable of dissipating up to 400W of power, ensuring reliable operation under demanding conditions.
• TO-247 Package: Provides efficient heat dissipation and ease of mounting.