IRFP140N,N-Channel MOSFET,100V,27A

The IRFP140N is a rugged and reliable N-channel HEXFET power MOSFET designed by International Rectifier. This MOSFET utilizes advanced processing techniques to achieve low on-resistance and dynamic performance, making it ideal for high-power switching applications. With a drain-source voltage of 100V and a maximum continuous drain current of 27A, the IRFP140N delivers excellent performance in demanding conditions

Key Features :

• Advanced Process Technology: Incorporates cutting-edge HEXFET design for superior efficiency.
• High Voltage and Current Capability: Supports 100V drain-source breakdown voltage and 27A continuous drain current.
• Low On-Resistance: Features an RDS(on) value of 0.052 ohms for efficient performance.
• High-Speed Switching: Optimized for fast switching applications with low switching losses.
• Thermal Efficiency: TO-247AC package for superior heat dissipation and high power dissipation of 190W.
• Wide Operating Temperature: Operates reliably between -55C and 175C junction temperature.