IRF2807,N-Channel MOSFET,75V, 82A - TO-220-3

The IRF2807 is a fifth-generation N-Channel HEXFET Power MOSFET designed for high-performance, reliability, and efficiency in various power management applications. With a drain-source breakdown voltage of 75V and a continuous drain current of 82A, this component is ideal for fast-switching and high-current applications. Its advanced HEXFET technology ensures low RDS(on) and minimized conduction losses, while its ruggedized device design supports reliable operation in challenging environments.

This MOSFET is preferred for commercial and industrial applications, particularly in automotive systems, power supplies, and motor controls, thanks to its low thermal resistance, compact TO-220 package, and ability to handle up to 280A pulsed current. The IRF2807 delivers superior thermal management with a maximum junction temperature of 175C and is fully avalanche rated for enhanced durability.

Key Features :

• High Current Capability: Continuous drain current up to 82A and pulsed drain current of 280A.
• Low On-Resistance: Extremely low RDS(on) of 0.013Ohm, minimizing power loss.
• High-Speed Switching: Optimized for fast-switching applications with a typical turn-on delay time of 14ns.
• Thermal Stability: Withstands high temperatures up to 175C for robust performance.
• Compact Design: TO-220-3 package with low thermal resistance for efficient heat dissipation.
• Fully Avalanche Rated: Ensures reliability under high-energy conditions.