RJH3044, N-Channel IGBT with Fast Recovery Diode, TO-220FL

The RJH3044 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Utilizing trench gate and thin wafer technology, this IGBT offers low conduction losses and efficient switching performance, making it ideal for use in motor drives, power supplies, and high-frequency inverters.

With a Collector-Emitter Voltage (V_CES) rating of 360V and a Continuous Collector Current of 30A at 25°C, the RJH3044 provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.5V at 25°C minimizes conduction losses, while a typical rise time of 80ns ensures efficient high-speed switching.

The device features a built-in fast recovery diode, enhancing efficiency by reducing switching losses in various power applications. Encased in an isolated TO-220FL package, the RJH3044 offers ease of integration into various circuit designs, providing both electrical isolation and thermal performance.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 360V, suitable for medium-voltage applications.
• High Current Capability: Continuous Collector Current of 30A at 25°C, ideal for high-power applications.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.5V at 25°C, minimizing conduction losses.
• Fast Switching Performance: Designed for high-speed switching with a typical rise time of 80ns, enhancing efficiency in switching applications.
• Integrated Fast Recovery Diode: Built-in fast recovery diode improves efficiency and reduces switching losses in various power applications.
• Isolated Package: Encased in a TO-220FL package, providing isolation and ease of integration into various circuit designs.