RJH60F5, N-Channel IGBT with Fast Switching, TO-247

The RJH60F5 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and other power conversion circuits.

With a Collector-Emitter Voltage (V_CES) rating of 600V and a Continuous Collector Current of 80A at 25°C, the RJH60F5 provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.37V at 40A minimizes conduction losses, enhancing overall efficiency.

The device's fast switching capabilities, characterized by a typical rise time of 85 ns, make it suitable for high-frequency applications. The integrated fast recovery diode further enhances performance in various power applications. Encased in a standard TO-247 package, the RJH60F5 offers ease of integration into various circuit designs, providing efficient heat dissipation and reliable performance.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 600V, suitable for high-voltage applications.
• High Current Capability: Continuous Collector Current of 80A at 25°C, accommodating substantial power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.37V at 40A, reducing conduction losses.
• Fast Switching Performance: Optimized for high-speed operation with a typical rise time (t_r) of 85 ns, enhancing overall efficiency.
• Integrated Fast Recovery Diode: Enhances performance in various power applications by providing efficient freewheeling.
• Standard TO-247 Package: Provides efficient heat dissipation and ease of integration into various circuit designs.