GT45F122, N-Channel IGBT, TO-220F

The GT45F122 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for medium-voltage, high-current power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in power inverters, motor drives, and power supply applications.

With a Collector-Emitter Voltage (V_CE) rating of 300V and a Continuous Collector Current of 45A at 25°C, the GT45F122 provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.7V at 25°C minimizes conduction losses, enhancing overall efficiency.

The device operates efficiently with a maximum junction temperature of 150°C, ensuring reliable performance under thermal stress. Encased in a TO-220F package, the GT45F122 offers ease of integration into various circuit designs.

• High Voltage Capability: Collector-Emitter Voltage (V_CE) rating of 300V, suitable for medium-voltage applications.
• High Current Handling: Continuous Collector Current of 45A at 25°C, accommodating substantial power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.7V at 25°C, reducing conduction losses.
• Efficient Switching Performance: Designed for effective switching operations, enhancing efficiency in various applications.
• Thermal Performance: Maximum Junction Temperature of 150°C, ensuring reliable operation under thermal stress.
• Compact TO-220F Package: Encased in a TO-220F package, facilitating easy integration into various circuit designs.