RD15HVF1,Silicon MOSFET Power Transistor,15W Output Power,175MHz-520MHz

The RD15HVF1 is a high-performance Silicon MOSFET Power Transistor designed for RF power amplifiers in VHF/UHF bands. Offering an impressive output power of up to 15W with high efficiency, this transistor is ideal for applications requiring superior linearity and amplification. Operating over a frequency range of 175 MHz to 520 MHz, it is tailored for mobile radio sets and other RF communication systems.

This RoHS-compliant transistor features excellent thermal stability, a wide operating temperature range of -40C to +150C, and robust drain efficiency of up to 60% in VHF bands. Its through-hole mounting style ensures ease of installation for various amplifier designs. With Mitsubishi’s proven technology, the RD15HVF1 delivers reliable performance for high-frequency, high-power applications.

Key Features :

• Output Power: Capable of up to 15W at 175 MHz with Vdd=12.5V, ensuring optimal performance in RF power amplifiers.
• Wide Frequency Range: Operates from 175 MHz to 520 MHz, suitable for VHF and UHF applications.
• High Efficiency: Achieves 60% efficiency at VHF and 55% at UHF for energy-efficient operations.
• RoHS Compliant: Environmentally friendly design with compliance to RoHS standards.
• Thermal Stability: Withstands temperatures ranging from -40C to +150C, ensuring robust performance under various conditions.
• Reliable Performance: Features low thermal resistance (2.6C/W) for efficient heat dissipation and long-term reliability.