GT30G124,N-Channel IGBT, TO-220SIS

The GT30G124 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in plasma display panels (PDPs), motor drivers, uninterruptible power supply (UPS) systems, and other power conversion circuits.

With a Collector-Emitter Voltage (V_CES) rating of 430V and a Pulse Collector Current of 200A at 25°C, the GT30G124 provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.5V at 25°C minimizes conduction losses, while its fast switching capabilities ensure efficient high-speed operation.

The device features a built-in freewheeling diode tailored for specific applications, enhancing performance in various power applications. Encased in a standard TO-220SIS package, the GT30G124 offers ease of integration into various circuit designs, providing efficient heat dissipation and reliable performance.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 430V, suitable for medium-voltage applications.
• High Current Capability: Pulse Collector Current of 200A at 25°C, accommodating substantial power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.5V at 25°C, reducing conduction losses.
• Fast Switching Performance: Optimized for high-speed operation, enhancing efficiency in switching applications.
• Integrated Freewheeling Diode: Built-in diode tailored for specific applications, improving performance.
• Standard TO-220SIS Package: Provides ease of integration into various circuit designs with efficient heat dissipation.