GT30J124,N-Channel IGBT, 600V,200A

The Toshiba GT30J124 is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage and high-current applications. With a maximum collector-emitter voltage of 600V and the ability to handle pulse currents up to 200A at 25°C, it is well-suited for demanding power applications. The device features a low typical collector-emitter saturation voltage of 2.4V at 25°C, ensuring efficient operation. Its fast switching capabilities make it ideal for applications requiring rapid switching performance. Encased in a TO-220SIS package, the GT30J124 offers ease of mounting and effective thermal management, making it a reliable choice for various high-power applications.

• High Voltage Capability: With a maximum collector-emitter voltage of 600V, the GT30J124 is suitable for high-voltage applications.
• High Current Handling: Capable of handling up to 200A pulse current at 25°C, making it ideal for demanding power applications.
• Low Saturation Voltage: Features a typical collector-emitter saturation voltage of 2.4V at 25°C, ensuring efficient performance.
• Fast Switching Speed: Designed for high-speed operation, enhancing efficiency in switching applications.
• TO-220SIS Package: Encased in a TO-220SIS package, offering ease of mounting and thermal management.
• N-Channel Configuration: Utilizes an N-channel design, providing efficient conduction and control.