IRF610,Power MOSFET,200V,2.8A

The IRF610 Power MOSFET is a highly efficient N-channel device designed for a wide range of commercial-industrial applications. With a maximum drain-source voltage of 200V and a continuous drain current of 2.8A, it is an ideal choice for low-power applications requiring high switching speed and low gate drive requirements. Featuring a TO-220AB package, this device ensures efficient heat dissipation and reliable operation.

Key Features :

• High Voltage Tolerance: Maximum drain-source voltage of 200V, suitable for various high-voltage applications.
• High Efficiency: Continuous drain current of 2.8A for efficient operation in demanding circuits.
• Fast Switching: Low total gate charge (Qg) of 8.2nC enables rapid switching performance.
• Thermal Performance: TO-220AB package ensures effective heat dissipation and durability.
• Reliable Design: Features a rugged construction and repetitive avalanche capability for improved reliability.
• Wide Temperature Range: Operates within a temperature range of -55C to +150C, suitable for harsh environments.