RJP30H2A, N-Channel IGBT with Fast Switching Capability, TO-263

The RJP30H2A is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications in plasma display panels (PDPs), motor drivers, uninterruptible power supply (UPS) systems, and other power conversion circuits. Utilizing trench gate and thin wafer technology, this IGBT ensures low conduction losses and efficient performance.

With a Collector-Emitter Voltage (V_CES) rating of 360V and a Continuous Collector Current of 35A, the RJP30H2A is optimized for demanding applications requiring reliable performance and efficient switching. The device achieves a low Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.4V, reducing conduction losses and improving overall energy efficiency.

Encased in a standard TO-263 package, the RJP30H2A offers excellent thermal performance, ease of surface-mount integration, and reliable operation in compact power designs. This device is suitable for use in power conversion and high-speed switching environments.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 360V, suitable for medium-voltage applications.
• High Current Capability: Continuous Collector Current of 35A at 25°C, accommodating substantial power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.4V, reducing conduction losses.
• Fast Switching Performance: Optimized for high-speed operation with rise time (t_r) of 100 ns and fall time (t_f) of 180 ns.
• Integrated Fast Recovery Diode: Built-in fast recovery diode enhances performance in various power applications.
• Compact TO-263 Package: Standard TO-263 surface-mount package for ease of integration and efficient heat dissipation.